PHYSICS OF NANOTRANSISTORS: 2D MOS ELECTROSTATICS AND VIRTUAL SOURCE MODEL
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2019, Vol 16, Issue 3
Abstract
In the fourth one from the line our new tutorial reviews, directed to serve students, university teachers and researchers, the 2D electrostatics of MOS is considered in detail. It is demonstrated, that 2D electrostatics degrades electron transport in field effect transistors by increasing the subthreshold swing and causing the DIBL effect, which in its turn increases the output conductivity and reduces the threshold voltage in short-channel transistors. Since these effects are more pronounced in short-channel transistors, they are also called short channel effects. As transistors get smaller and smaller, the main challenge with circuitry is to control the short-channel effects. As a rule, numerical modeling is required.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP670197
- DOI 10.18524/1815-7459.2019.3.179347
- Views 89
- Downloads 0
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