SENSORS ON THE BASE OF ZNMGSE
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 1
Abstract
Effect of Mg diffusion on photoelectrical and luminescence properties of Zn0,88Mg0,12Se have been investigated. It was found that doping substance exhibits the properties of isovalent impurities. It causes an inversion of conductivity type and obtaining of p–n-junctions with high photosensitivity. Mg doped diffusion layers are characterized by intense luminescence in the edge range with quantum efficiency of 15-18 %.
Authors and Affiliations
M. M. Slyotov, A. M. Slyotov, A. G. Shahmatova, K. S. Ulyanitskiy
Keywords
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- EP ID EP399078
- DOI 10.18524/1815-7459.2015.1.107701
- Views 78
- Downloads 0
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