DETERMINATION OF BARRIER HEIGHT OF NI-SEMICONDUCTOR CONTACTS BY PHOTOELECTRIC METHOD
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 2
Abstract
The photocurrent spectra of structures obtained by vacuum deposition of semitransparent Ni layers on the chemically etched substrates of a number of semiconductors (Si, GaAs, GaP, CdTe, and ZnSe) of n-type conductivity are analyzed. All structures have photosensitivity in the region of photon energies less than the width of the semiconductor band gap under irradiation from both the nickel side and the substrate side. Both these spectral regions plotted in the Fowler coordinates lead to the same values of the potential barrier height for each of the Ni-semiconductor contacts that investigated.
Authors and Affiliations
V. P. Makhniy, M. M. Berezovskiy, V. M. Sklyarchuk, A. M. Slyotov
Keywords
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- EP ID EP399943
- DOI 10.18524/1815-7459.2018.2.136883
- Views 64
- Downloads 0
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