COMPARATIVE ANALYZE OF THE EFFICIENCY OF THE SENSOR STRUCTURES BASED ON “DEEP” SILICON P-N JUNCTION WITH ACTIVE LAYERS OF DIFFERENT ELECTRICAL CONDUCTIVITY TYPE
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 1
Abstract
It is shown that efficiency of sensor structures based on deep silicon p-n junction significantly depends on the electrical conductivity type of the illuminated region. The structures can be effective in the case of polar molecules absorption. Based on numerical modeling results, it is established that the value of sensor signal can be greater in the case of illuminated region of n-type conductivity (base region). It means that such structures have more significant potential for construction of the sensors with photoelectrical transduser principle in comparison with structures that have active layer of p-type.
Authors and Affiliations
A. V. Kozynets
Keywords
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- EP ID EP399895
- DOI 10.18524/1815-7459.2018.1.126350
- Views 64
- Downloads 0
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