THE TOPOLOGY OF THE SURFACE OF ZNCDO THIN OXIDE FILM OF N-ZNCDO–P-GASE HETEROJUNCTION
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 2
Abstract
Heterostructure n-Zn0.5Cd0.5O–p-GaSe was prepared by the method of high-frequency magnetron sputtering for the first time. Topology of surface of Zn0.5Cd0.5O thin oxide film formed on freshly cleaved van der Waals surface of GaSe layered crystal was investigated. Sensitivity spectral areas was identified. The method of AFM images has revealed that Zn0.5Cd0.5O thin oxide film has through channels of different topologies and sizes that significantly influence on the heterojunction shunt resistances.
Authors and Affiliations
Z. D. Kovalyuk, V. M. Katerynchuk, Z. R. Kudrynskyi, B. V. Kushnir, V. V. Khomyak
Keywords
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- EP ID EP399209
- DOI 10.18524/1815-7459.2015.2.107590
- Views 93
- Downloads 0
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