Deformation potentials for Δ1 minimum of conduction band of single crystals n-Ge
Journal Title: JOURNAL OF ADVANCES IN PHYSICS - Year 0, Vol 5, Issue 1
Abstract
Deformation potentials eV and eV for ∆1 minimum of conduction band of single crystals  n-Ge are defined on the basis of theory of the anisotropic scattering and experimental data of longitudinal piezo resistance for single crystals n-Ge for the case, when P||J||[100]. Pressure coefficients for ∆ 1 minimum under uniaxial pressure along crystallographic directions [100], [110] [111] and hydrostatic pressure have been calculated taking into account the given parameters. The results show that the inversion of (L1-∆1) type of absolute minimum in single crystals n-Ge can be implemented under hydrostatic and uniaxial pressures P||J||[100] і P||J||[110].
Authors and Affiliations
Burban Olexandr, Luniov Sergiy, Nazarchuk Petro
Keywords
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- EP ID EP653536
- DOI 10.24297/jap.v5i1.1969
- Views 68
- Downloads 0
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Deformation potentials for Δ1 minimum of conduction band of single crystals n-Ge
Deformation potentials eV and eV for ∆1 minimum of conduction band of single crystals  n-Ge are defined on the basis of theory of the anisotropic scattering and experimental data of longitudinal piezo resis...