DESIGN AND IMPLEMENTATION OF LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND RECEIVER IN 180nm CMOS TECHNOLOGY
Journal Title: ICTACT Journal on Microelectronics - Year 2015, Vol 1, Issue 2
Abstract
This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain. Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain. The proposed UWB LNA is implemented by using 180nm based CMOS TSMC technology using Advanced Design System (ADS) software.LNA achieves maximum gain of 15.5 dB, minimum noise figure of 2.88 dB, -6 dBm of IIP3 and wideband input matching in the UWB frequency range of 3.1 GHz to 10.6 GHz. The proposed LNA provides group delay of 60 ps and isolation of less than 25 dB under the 1.8 V DC power supply.
Authors and Affiliations
Neelam Gautam, Manish Kumar, Abhay Chaturvedi
Keywords
Related Articles
- EP ID EP198011
- DOI 10.21917/ijme.2015.0012
- Views 147
- Downloads 0
DEFECTIVE GROUND CORNER ROUNDED ULTRA-WIDEBAND MICROSTRIP PATCH ANTENNA FOR BIO-MEDICAL APPLICATIONS
In this research work, design of Ultra-Wide-band microstrip line feed partial ground structure corner rounded rectangular microstrip patch antenna is presented. Design is implemented on FR4 substrate, and results implies...
SEMI-CONDUCTOR AMBIENCE FOR BUILDING SELF-RELIANCE IN THE COUNTRY
In the present era of importing chips are the major bottlenecks in attaining self-reliance for the strategic sector in the country. The existing trend of chip development at nanometer geometry needs huge and constant cap...
SIMULATED ANNEALING ALGORITHM FOR MODERN VLSI FLOORPLANNING PROBLEM
In floorplanning, our aim is to determine the relative locations of the blocks in the chip and the objective is to minimize the floorplan area, wirelength. Generally, there are so many strategies in VLSI floorplanning li...
ANALYTICAL MODELLING OF LOW PRESSURE SINGLE BOSS SCULPTURED DIAPHRAGM AND ITS SENSITIVITY ENHANCEMENT
The low pressure is measured by using thin Sculptured diaphragm using micro system fabrication technology. The thickness of this diaphragm is reduced to improve sensitivity is achieved by boss like structure to increase...
DESIGN AND SIMULATION OF DRIFT-DIFFUSION AND HYDRODYNAMIC MODELS FOR AlGaN/GaN HEMTs
Gallium Nitride based HEMTs because of their peculiar material properties are widely used to realize high power, high frequency communication device and very much suitable for bio-sensing application. But to realize AlGa...