Design of L-Band Power Amplifier by Using MicrostripBased GaAs p-HEMT MMG15241H Transistor
Journal Title: Jurnal INFOTEL - Year 2018, Vol 10, Issue 1
Abstract
The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 – 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB
Authors and Affiliations
Rifki Amiruddin, Budi Syihabuddin, Yuyu Wahyu
Keywords
Related Articles
- EP ID EP469613
- DOI 10.20895/infotel.v10i1.331
- Views 98
- Downloads 0
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