Design of L-Band Power Amplifier by Using MicrostripBased GaAs p-HEMT MMG15241H Transistor

Journal Title: Jurnal INFOTEL - Year 2018, Vol 10, Issue 1

Abstract

The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 – 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB

Authors and Affiliations

Rifki Amiruddin, Budi Syihabuddin, Yuyu Wahyu

Keywords

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  • EP ID EP469613
  • DOI 10.20895/infotel.v10i1.331
  • Views 113
  • Downloads 0

How To Cite

Rifki Amiruddin, Budi Syihabuddin, Yuyu Wahyu (2018). Design of L-Band Power Amplifier by Using MicrostripBased GaAs p-HEMT MMG15241H Transistor. Jurnal INFOTEL, 10(1), 7-14. https://europub.co.uk/articles/-A-469613