Detonation spray method: features of technical implementation of the process and technology for obtaining ultrathin layers of semiconductor oxides
Journal Title: Вісник Житомирського державного технологічного університету. Серія: Технічні науки - Year 2019, Vol 83, Issue 1
Abstract
The design has been developed and the main components of the equipment for detonation growth have been modernized, which allows conducting the synthesis of semiconductor ultrathin films. The equipment was modernized taking into account the features of the thermodynamic properties of semiconductor materials. The data on the main adapted elements of the equipment are given, their functional purpose is indicated. Special attention is paid to the principles of operation of both the modified units of equipment and their functional interrelations in managing the process of the synthesis of layers. The conditions for the functioning and burning of gaseous hydrogen - oxygen mixture to obtain a high-energy shock wave, which provided the process of mass transfer of matter from source to substrate during the synthesis of ultrathin oxide semiconductor layers, are found. Particular attention is paid to ensuring optimal gas-dynamic conditions for the propagation of the zone of increased pressure in the process of transferring the substance from the source to the growth substrate. The design has been developed and systems of check valves have been manufactured that provide a given rate of switching gas flows during the synthesis of semiconductor oxides. The detonation spray method was used to synthesize ultrathin layers of the PbO and ZnO systems. The crystallographic and morphological properties of the surface of layers synthesized by detonation growth were investigated by optical methods. The obtained photographic images were analyzed by the method of multifractal analysis. It is proved that the multifractal parameters of the spectrum of the nanoform surface area formed on the growth surface of the layers are comparable in size with the corresponding parameters for the spectra from the surface of the layers synthesized by vacuum technologies.
Authors and Affiliations
P. P. Moskvin, V. A. Rudnitskyi
Keywords
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