DEVELOPMENT OF HIGH-SENSITIVE HYDROGEN SENSORS OF SCHOTTKY DIODES BASED ON n-GaAs NANO LAYERS
Journal Title: Вісник Кременчуцького національного університету імені Михайла Остроградського - Year 2018, Vol 1, Issue 109
Abstract
Purpose. To research porous semiconductor materials which have unique chemical and physical properties due to their extremely small size and large surface-to-volume ratio, so they open up alternative possibilities for their various potential applications in optoelectronics, chemical and biochemical probing. Areas of use of porous gallium arsenide include the definition of biomarkers in medicine for early non-invasive diagnosis of diseases. Methodology. The sensitivity depends on the microstructure of the porous GaAs. The authors produced two types of hydrogen sensors based on the Schottky diode. Pd was deposited into two different GaAs structures, which were used as Pd / GaAs and Pd / porous-GaAs hydrogen sensors. Results. It was found that the porosity of the hydrogen-sensitive Pd / porous-GaAs contact of the Schottky diode affects the speed and sensitivity of the sensor. Pores in the Pd / po-rous-GaAs sensor increase the rate of hydrogen penetration compared to the Pd / GaAs co-pact. Even at room temperature and a relatively low hydrogen concentration (500 ppm), an increase in sensitivity of the Pd / porous-GaAs sensor was observed. The response time was less than 1 s and the sensitivity of the sensor was about 93.5% to the relative concentration of 25% hydrogen for the Pd / porous-GaAs sample, which works at room temperature. How-ever, the recovery time has been observed for a long time for about 4-5 minutes. As a result of the growth of electron microscopy and photoluminescence, the high efficiency of the Pd / porous-GaAs sensor depends on the GaAs porosity. Originality. The results of the volt-ampere characteristics of the sample Pd / porous-GaAs confirmed the increase in sensitivity at room temperature from 6.0 × 10-7 A to 9.0 × 10-6 A. In addition, the reaction time Pd / porous-GaAs, which showed the perspectivity of the application of this material as a hydrogen microsensor. The practical value. The main advantage of the sensor obtained is the ability to operate at a temperature of the temperature. It is shown that porous GaAs are suitable for measuring the concentration of hydrogen, which can be easily integrated into the chip as an intelligent sensor of hydrogen.
Authors and Affiliations
А. Oksanich, М. Kogdas, O. Holod, M. Maschenko
Keywords
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- EP ID EP659613
- DOI 10.30929/1995-0519.2018.2.p1.9-14
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