Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 2
Abstract
The dynamical screening function of two-dimensional electron gas in a wide HgTe quantum well (QW) has been numerically modeled in this work. Calculations were performed in the Random Phase Approximation (RPA) framework and were based on the Lindhard equation. Our simulations directly incorporated non-parabolicity of bulk 2D carriers’ spectrum, which was obtained by full 8-band k.p method. Known from literature are the data that transport properties of HgTe QWs can be explained by graphene-like screening. We carried out the comparison of the screening function for the Schrödinger fermions in the inverted bands HgTe QW with the appropriate screening function for graphene monolayer with the Dirac fermions. In addition, the dependences of HgTe-specific screening function on temperature, scattering wave-vector and frequency have been studied with the purpose to ascertain the transport properties under high frequency radiation for the QW structures to be used as THz detectors. Plasmon frequencies of 2DEG in HgTe quantum well under study were calculated in the long-wave limit for T = 77 K.
Authors and Affiliations
E. O. Melezhik
Keywords
Related Articles
- EP ID EP416001
- DOI 10.15407/spqeo21.02.187
- Views 73
- Downloads 0
Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode
Dependences of the depletion widths in a radial core-shell p-n diode on the radius of metallurgical boundary of the p-n junction have been studied theoretically in detail. While the depletion width of the core increases...
Photoconductivity relaxation and electron transport in macroporous silicon structures
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport t...
Deposition and optical absorption studies of Cu–As–S thin films
Cu–As–S thin films were deposited using the thermal evaporation technique. Optical transmission spectra of Cu 0.1 As 2.1 S 3.1 thin films were measured within the temperature range 77...300 K. Temperature behaviour of ab...
The role of shear modulus and viscosity of thin organic films on the adsorption response of QCM sensors
This work reports on the results of numerical calculations of quartz microbalance (QCM) sensors response under adsorption of analyte molecules. The influence of share modulus and viscosity has been studied. It was shown...
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a p...