Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.
Authors and Affiliations
S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov
Keywords
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- EP ID EP177839
- DOI 10.15407/spqeo19.01.062
- Views 114
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