Effect of Finishing Chemical Treatment of Si-Wafers Surface on the Desorption of Ag+, Fe3+, Ca2+ Ions
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
The effectiveness of different methods of finishing chemical treatment, which are used to reduce uncontrolled technological impurity, of surface Si-wafers is investigated by the method of radioactive indicators. Criterion of qualitative and quantitative evaluation of the effectiveness of finishing chemical treatment chosen as value change of contact potential difference, work function of electron and surface resistance. Experimentally, the adsorption of Fe3+ and Ca2+ ions decreases and Ag+ ions – to increase the value of the contact potential difference. It is shown, that in the case of Si-wafer processing in ammoniac-peroxide solutions the degree of desorption of ions iron does not exceed 40 %, while the ions Ag+ the degree of desorption 100 %. Introduction to ammoniac-peroxide solutions potassium hydroxide, treatment of acid-peroxide solution or combination treatment in ammoniac-peroxide solutions and acid-peroxide solution increase the degree of desorption of ions Fe3+ to 100 %. Desorption of Ca2+ ions to study options of finishing chemical treatment occurs with less efficiency than ions Fe3+ and Ag+.
Authors and Affiliations
M. M. Vorobets
Keywords
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