Frequency and Temperature Dependence of Dielectric Parameters of Metal-Oxide-Semiconductor (MOS) Capacitor
Journal Title: Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji - Year 2016, Vol 4, Issue 2
Abstract
In this study, the dielectric parameters of metal-oxide-semiconductor (MOS) capacitor with silicon nitride (Si3N4) interfacial oxide layer have been investigated. The admittance measurements (capacitance and conductance) were performed in the temperature range of 300-400 K for three different frequencies (100, 500 and 1000 kHz). The dielectric parameters of the MOS capacitor were calculated using these measurements. The dielectric constant (ε') and loss (ε'') increase with increasing temperature, while they decrease with increasing frequency. Also, ac conductivity (ac) increases with increasing temperature and frequency. Arrhenius plots (lnac-1000/T) of ac conductivity show two linear regions with different slopes in the temperature range of 300-320 K and 340-400 K, respectively. Also, the activation energies (Ea) were calculated from slope of two linear regions.
Authors and Affiliations
Adem TATAROĞLU
Keywords
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