Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 1
Abstract
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-homotransition reduces their frequency range and performance. Nowadays proposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and small size structures. These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits. In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speed of large integrated circuits structures.
Authors and Affiliations
S. P. Novosyadlyy, A. M. Bosats'kyy
Keywords
Related Articles
- EP ID EP313929
- DOI 10.15330/pcss.16.1.221-229
- Views 43
- Downloads 0
Electrophysical Properties of Indium Doped As2(S, Se)3 thin Films
The electrical studies of In-doped thin films based glassy As2S3 and As2Se3, determined the energy of activation, the analysis of photovoltaic memory samples.
Теоретичні аспекти процесів інтеркаляції: Узагальнені рівняння переносу типу Нернста-Планка для іонів та електронів в системі "електроліт - електрод"
Отримано узагальнені рівняння переносу типу Нернста-Планка для іонів та електронів в системі "електроліт - електрод" з використанням метода нерівноважного статистичного оператора. Рівняння переносу враховують ефекти пам’...
Features of the Structural, Energetic and Kinetic Properties HfNi1-xRuxSn Solid Solution
The crystal and electronic structure, energy and kinetic properties of semiconducting HfNi1-xRuxSn solid solution in the ranges : T = 80÷400 K, ≈ 9,5•1019 см-3 (х = 0,005) ÷ 5,7•1020 см-3 (х = 0,03), was investigated. Th...
The Physical and Thermodynamic Functions of Borides
In the paper the physical properties and thermodynamic functions of borides Х2В (Х = W, Mo, Mn, Fe, Co, Ni та Cr) are studied with accounting for fluctuation processes. We use the microstructure analysis, the X-ray struc...
Thermoelectric Properties of Solid Solutions PbSnAgTe
The phase composition and thermoelectric properties of solid solutions Pb16Sn2Ag2Te20 and Pb14Sn4Ag2Te20 are researched. Biphasic structure of the samples is installed, which providing to low values of thermal conductivi...