Thermodynamics of Defects Subsystem of II-VI Crystalsin Gibbs Potential Aproximation: Modeling, Calculation
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3
Abstract
In example of II-VI ZnTe, CdTe crystals, using method which based on minimizing the thermodynamic potential of the "crystal-pair" as a function of defect concentration, have been calculated equilibrium concentration of point defects and free carriers in zinc telluride crystals ZnTe and CdTe depending on technological factors of two-temperature annealing (annealing temperature T and vapor pressure of zinc PMe or tellurium PTe).
Authors and Affiliations
I. V. Gorichok, Т. О. Parashchuk, L. I. Nykyruy, D. M. Freik
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