Impedance of Sі Wires at Metal-Insulator Transition
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
Impedance spectroscopy for Si wires with dopant concentrations near the metal-insulator transition in the low temperature range 4.2 - 70 K and frequencies 0.01 - 250 kHz has been conducted. The studies allow us to obtain parameters of hopping conduction (localization radius, density of localized states and average length of carrier jumping) and compare them with theoretical data.
Authors and Affiliations
A. A. Druzhinin, I. P. Ostrovskii, Yu. N. Khoverko, R. N. Koretskyy, S. I. Nichkalo
Keywords
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