IMPURITY OF ATOMS OF MANGANESE DIFFUSION BY OUTSIDE ELECTRIC FIELD INTO SILICON

Journal Title: International scientific journal Science and Innovation - Year 2023, Vol 2, Issue 8

Abstract

In this work, manganese atoms were diffused into a silicon sample using an external constant electric field, and the electrophysical parameters of the samples were studied using the Van der Paw method. In addition, the surface morphology and element composition of the samples were analyzed using a scanning electron microscope. From the results, it was found that Mn atoms were significantly diffused in the samples placed on the side of the negative pole of the constant external electric field compared to the samples placed on the side of the positive pole

Authors and Affiliations

Iliyev Xalmurat Midjitovich, Xudoynazarov Zafar Burxutovich, Isakov Bobir Olimjonovich, Uralbayev Xurshid, Kushiev Giyosiddin Abdivaxob ogli

Keywords

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  • EP ID EP721008
  • DOI 10.5281/zenodo.8279994
  • Views 47
  • Downloads 0

How To Cite

Iliyev Xalmurat Midjitovich, Xudoynazarov Zafar Burxutovich, Isakov Bobir Olimjonovich, Uralbayev Xurshid, Kushiev Giyosiddin Abdivaxob ogli (2023). IMPURITY OF ATOMS OF MANGANESE DIFFUSION BY OUTSIDE ELECTRIC FIELD INTO SILICON. International scientific journal Science and Innovation, 2(8), -. https://europub.co.uk/articles/-A-721008