Influence of Doping and Two-temperature Annealing on CdTe:Br Defective Subsystem
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3
Abstract
The influence of impurities and annealing conditions on the electrical properties of single cadmium telluride crystals with bromine doping grown by Bridgman method and annealed in cadmium atmosphere at temperatures T = 800-1100 K and pressures of metal vapor PCd = 103-105 Pa have been investigated and analyzed. Quasi-chemical reactions of point defects in doped material have been proposed and concentration of free charge carriers and the prevailing point defects on the technological parameters of two-temperature annealing have been calculated. It was established the dominant type of point defects, which determined the electrical properties of the material. The equilibrium constant of complex formation of impurity defects substitution of intrinsic point defects have been determined.
Authors and Affiliations
U. M. Pysklynets, P. M. Fochuk, I. V. Gorichok, V. V. Prokopiv, O. L. Sokolov
Keywords
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