Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 4
Abstract
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.
Authors and Affiliations
V. M. Katerynchuk, B. V. Kushnir, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, O. S. Litvin
Keywords
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- EP ID EP260944
- DOI 10.15330/pcss.17.4.507-510
- Views 78
- Downloads 0
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