Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu)
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 1
Abstract
The features of structural, energy state and kinetic characteristics of the p-GdNiSb and p-LuNiSb semiconductors were investigated in the temperature range T = 4.2-400 K. As example, in p-LuNiSb, the generating of structural acceptor defects as a result of the emergence of vacancies upto 6 % in the 4c positions of Ni (3d84s2) atoms and partial, up to 1.35 %, substitution of Ni (4c) atoms by Lu (5d16s2) ones was shown.
Authors and Affiliations
L. P. Romaka, V. V. Romaka, Yu. V. Stadnyk, V. Ya. Krayovskyy, D. Kaczorowski, A. M. Нoryn
Keywords
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- EP ID EP255261
- DOI 10.15330/pcss.17.1.37-42
- Views 51
- Downloads 0
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