London forces in highly oriented pyrolytic graphite
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
Surface of highly oriented pyrolytic graphite with terrace steps was studied using scanning tunneling microscopy with high spatial resolution. Spots with positive and negative charges were found in the vicinity of the steps. Values of the charges depended both on the microscope needle scan velocity and on its motion direction. The observed effect was theoretically explained with account of London forces that arise between the needle tip and the graphite surface. In this scheme, a terrace step works as a nanoscale diode for surface electric currents.
Authors and Affiliations
L. V. Poperenko, S. G. Rozouvan, I. A. Shaykevich
Vitamin B12-functionalized patterned Si surface for solar energy conversion
Interaction between organic and inorganic materials is very actual both for understanding their nature and for some applications. One of directions in this area is functionalization and sensibilization of semiconductor s...
Nanocrystalline silicon carbide films for solar cells
Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silico...
Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1...4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The st...
Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering
Cu6PS5I-based thin films were deposited using non-reactive radio-frequency magnetron sputtering. Structural studies of thin films were performed by scanning electron microscopy, their chemical composition were determined...
Nanograin boundaries and silicon carbide photoluminescence
The luminescence spectra of SiC crystals and films with grain boundaries (GB) on the atomic level were observed. The GB spectra are associated with luminescence centers localized in areas of specific structural abnormali...