Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 3
Abstract
The thermal conductivity of silicon/germanium nanowires with different geometry and composition has beenstudied by using the nonequilibrium molecular dynamics method. The thermal conductivity of the Si1-xGexnanowire is shown to firstly decrease, reaches a minimum at x=0.4 and then to increase, as the germaniumcontent x grows. It was found that in the tubular Si nanowires the thermal conductivity decreases monotonouslywith increasing radius of the cylindrical void. The phonon spectra were calculated and the mechanisms of phononscattering in the investigated nanowires were analyzed.
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Study of Electrokinetic and Magnetic Properties of ZrNi1-xRhxSn Semiconductive Solid Solution
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The Impact of d– and f–compression on Anisotropy of Elastic Properties of Single Crystals with Hexagonal Close Packing of Lattice
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Structural and Optical Properties of Co and Ni Doped ZnO Thin Films Prepared by RF Magnetron Sputtering
We have reported the effect of Co and Ni doping on structural and optical properties of ZnO thin films prepared by RF reactive sputtering technique. The composite targets were formed by mixing and pressing of ZnO, Mn3O4,...
Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits
This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large...