NON-CONTACT OPTICAL THERMAL SENSORS BASED ON (GA54.59IN44.66ER0.75)2S300 SINGLE CRYSTALS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 1
Abstract
The (Ga54.59In44.66Er0.75)2S300. single crystal was grown in a vertical two-zone furnace by a solution-melt method. In the optical absorption spectrum of the obtained single crystal (Ga54.59In44.66Er0.75)2S300. the maxima corresponding to transitions in the 4f shell of Erbium ions were identified. The spectra of photoluminescence were investigated at temperatures of 150, 200, 250, 300 K and at laser excitation with a wavelength of 980 nm. The radiation maxima (805, 1540 nm) do not change their position and form when temperature changes. On the basis of the diagram of energy levels of the Er3+ ions, the mechanism of radiation is established, and the growth of the integral intensity of the photoluminescence according to increasing temperature is explained. The sensitivity of the radiation maxima of the (Ga54.59In44.66Er0.75)2S300. single crystal from temperature is calculated.
Authors and Affiliations
V. V. Halyan, I. A. Ivashchenko, A. H. Kevshyn, I. D. Olekseyuk, A. P. Tretyak, P. V. Tishchenko
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