Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Journal Title: Opto-Electronic Advances - Year 2020, Vol 3, Issue 4
Abstract
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV Excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.
Authors and Affiliations
Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou
Keywords
Related Articles
- EP ID EP683362
- DOI 10.29026/oea.2020.190025
- Views 162
- Downloads 0
Deep-learning powered whispering gallery mode sensor based on multiplexed imaging at fixed frequency
During the last decades the whispering gallery mode based sensors have become a prominent solution for label-free sensing of various physical and chemical parameters. At the same time, the widespread utilization of the a...
Movable electrowetting optofluidic lens for optical axial scanning in microscopy
Optical axial scanning is essential process to obtain 3D information of biological specimens. To realize optical axial scanning without moving, the tunable lens is a solution. However, the conventional tunable lenses usu...
Perfect electromagnetic and sound absorption via subwavelength holes array
Broadband sound absorption at low frequency is notoriously difficult because the thickness of the absorber should be proportional to the working wavelength. Here we report an acoustic metasurface absorber following the r...
Progress of optically pumped GaSb based semiconductor disk laser
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and sho...
Etching-assisted femtosecond laser modification of hard materials
With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablation...