Mid-infrared all-fiber gain-switched pulsed laser at 3 μm
Journal Title: Opto-Electronic Advances - Year 2020, Vol 3, Issue 5
Abstract
Mid-infrared (MIR) fiber pulsed lasers are of tremendous application interest in eye-safe LIDAR, spectroscopy, chemi-cal detection and medicine. So far, these MIR lasers largely required bulk optical elements, complex free-space light alignment and large footprint, precluding compact all-fiber structure. Here, we proposed and demonstrated an all-fiberized structured gain-switched Ho3+-doped ZBLAN fiber laser operating around 2.9 μm. A home-made 1146 nm Raman fiber pulsed laser was utilized to pump highly concentrated single-cladding Ho3+-doped ZBLAN fiber with different lengths of 2 m or 0.25 m. A home-made MIR fiber mirror and a perpendicular-polished ZBLAN fiber end construct the all-fiberized MIR cavity. Stable gain-switched multiple states with a sub-pulse number tuned from 1 to 8 were observed. The effects of gain fiber length, pump power, pump repetition rate and output coupling ratio on performance of gain-switched pulses were further investigated in detail. The shortest pulse duration of 283 ns was attained with 10 kHz repetition rate. The pulsed laser, centered at 2.92 μm, had a maximum average output power of 54.2 mW and a slope efficiency of 10.12%. It is, to the best of our knowledge, the first time to demonstrate a mid-infrared gain-switched Ho3+:ZBLAN fiber laser with compact all-fiber structure.
Authors and Affiliations
Xiaojin Zhang, Weiwei Li, Jin Li, Huiying Xu, Zhiping Cai, Zhengqian Luo
Probing defects in ZnO by persistent phosphorescence
Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the lo...
Silicon photonics for telecom and data-com applications
In recent decades, silicon photonics has attracted much attention in telecom and data-com areas. Constituted of high refractive-index contrast waveguides on silicon-on-insulator (SOI), a variety of integrated photonic pa...
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-tempera...
Recent improvement of silicon absorption in opto-electric devices
Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor absorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. Th...
Athermal third harmonic generation in micro-ring resonators
Nonlinear high-harmonic generation in micro-resonators is a common technique used to extend the operating range of applications such as self-referencing systems and coherent communications in the visible region. However,...