Peculiarities of Electrical Characteristics of Semi-Insulating CdTe-Cl crystals
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 3
Abstract
Electrical properties of semi-insulating CdTe-Cl crystals, grown by the vertical Bridgman and the travelling heater method, have been studied. It is found that the travelling heater method provides electron conductivity of the crystals, and the vertical Bridgman method - hole conductivity. Specific resistance of the samples is of (108-109) Ohm*cm at 300 K, and Hall mobility of the holes and electrons is of (45 - 55) cm2/V*sec. and (10 - 20) cm2/V*sec., respectively. Very low values of electron mobility and an exponential temperature dependence of µn are due to drift barriers with a height of εb ≈ 0,20 eV. Formation of the barriers is caused by the fluctuations of the potential relief resulting from the microheterogeneity of the defect-impurity system. Quasi-photochemical reactions that reduce electron mobility after photo-excitation have been observed in n-CdTe-Cl samples. In p-CdTe-Cl samples, neither drift barriers, nor quasi-photochemical reactions were detected.
Authors and Affiliations
Ye. S. Nykoniuk, Z. I. Zakharuk, S. V. Solodin, P. M. Fochuk, S. G. Dremluyzhenko, I. M. Yuriychuk, B. P. Rudyk
Keywords
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- EP ID EP263246
- DOI 10.15330/pcss.18.3.334-337
- Views 81
- Downloads 0
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