Quantum Size Effects in Thin Film Based on Lead Telluride
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 2
Abstract
Based on the model of quantum flat rectangular and with infinitely high walls pit, the correspondences were calculated and received value of the Fermi energy and kinetic coefficients (conductivity σ, Seebeck coefficient S and thermoelectric power S2σ) for n-PbTe, by the Boltzman kinetic equation. Еhe cases with strongly degenerate and degenerate electronic gas in the films of lead telluride with n-type of conductivity are considered separately. The oscillating character of dependences of thermoelectric parameters of nanostructures based on n-PbTe for the degenerate and strongly degenerate electron gas has been theoretically proved.
Authors and Affiliations
I. M. Freik, M. A. Ruvinskyy, Oksana Kostyuk, R. O. Dzumedzey
Keywords
Related Articles
- EP ID EP306568
- DOI 10.15330/pcss.16.2.284-288
- Views 63
- Downloads 0
Crystallographic Features of Nanostructures SnTe on Polyimide
It is done the statistical analysis of crystallographic angles of surface elements of tin telluride films deposited on a substrate of polyimide by open evaporation in a vacuum. Analysis of images obtained by atomic force...
Magnetic Hyperfine Structure of Epitaxial Films of Nickel Ferrite
Comparative NGR study of the parameters of the magnetic hyperfine structure of epitaxial NiFe2O4 films grown on MgO single-crystal substrates of orientations of (100) and (111) by liquid phase epitaxy (LPE) and chemical...
Magnetoresistance of Ge-Si Whiskers in the Vicinity to Metal– Insulator Transition
The magnetoresistance of GeхSi1-х (x = 0.002 ¸ 0.11) whiskers with an acceptor concentration(Na = 3.1018 ¸ 2.1019 cm-3) near the metal-insulator transition (MIT) was studied at low temperatures (4.2 - 77 K)in magnetic fi...
Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate ont...
Interaction Between PbF2 and EuS in Saline Melt NaCl-KCl
Ability to interaction between PbF<sub>2</sub> and EuS in NaCl-KCl saline melt is established by methods of luminescent spectroscopy and the X-ray diffraction analysis. Mutual quenching of intensive blue luminescence of...