PIEZOPHOTOCONDUCTIVITY SPECTRA OF SEMICONDUCTOR LAYERED CRYSTAL
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 4
Abstract
The results of investigations of piezophotoconductivity of layered crystals In4Se3, conductivity component which is proportional to the product of the intensity of light and the mechanical stress, are presented. We analyzed the structural changes which are caused by crystal deforming force that has harmonic component of low frequency. It is shown that deforming force leads to a relative shift of the layers and to change a component period grating which is normal to the plane of the layers, which is implemented discretely. We analyzed changes in the structure of the electron states which are caused by the diffraction of Bloch waves created on the Bragg planes, as well as the removal of degenerate energy states of mechanical stress. We clarified the reasons for the time shift between the phases of deforming force and the current of piezophotoconductivity. We estimated aspects of practical application of the effect.
Authors and Affiliations
Y. Stakhira, R. Stakhira
Keywords
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- EP ID EP397130
- DOI 10.18524/1815-7459.2016.4.86647
- Views 79
- Downloads 0
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