Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin film
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
The paper focuses on experimental study of the photovoltage time decay in ITO-Ge-Si heterojunction with Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependent decay constants. Photovoltage relaxation is modeled taking into account the hopping nature of electron transport in the band of localized states.
Authors and Affiliations
S. A. Iliash, Yu. V. Hyrka, S. V. Kondratenko, V. S. Lysenko, Yu. M. Kozyrev, V. V. Lendel
Keywords
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- EP ID EP217005
- DOI 10.15407/spqeo20.02.259
- Views 68
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