Selective Etching of ZnхCd1-хTe Single Crystals

Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 4

Abstract

Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. This article is the review of selective etching of ZnxCd1-xTe single crysrals. All informations has been generalized in the table. Qualitative and quantitative compositions of etchants and information about defect structure of ZnxCd1-xTe after etchant treatment have been represented in the table.

Authors and Affiliations

G. M. Okrepka, V. М. Tomashyk

Keywords

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  • EP ID EP293358
  • DOI 10.15330/pcss.16.4.711-715
  • Views 35
  • Downloads 0

How To Cite

G. M. Okrepka, V. М. Tomashyk (2015). Selective Etching of ZnхCd1-хTe Single Crystals. Фізика і хімія твердого тіла, 16(4), 711-715. https://europub.co.uk/articles/-A-293358