SEMICONDUCTOR INTEGRATED ELEMENTS BASED ON NANOSTRUCTURES SILICON FOR INFORMATION SYSTEMS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 1
Abstract
In this paper we consider the accelerometer sensor, which is made using the combined technology of silicon-on-insulator and silicon nanowires. On its basis a fast-response, high-speed, highly sensitive to acceleration and displacement a device was developed with submicron and topological nanometer dimensions. This made it possible to implement as a discrete device or element of nanoelectromechanical systems integrated with the structure of silicon-on-insulator, which provides control of movement with an accuracy of 200 nm
Authors and Affiliations
A. A. Druzhinin, I. T. Kogut, A. Yu. Khoverko, V. I. Golota, Yu. M. Khoverko
Keywords
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- EP ID EP399082
- DOI 10.18524/1815-7459.2015.1.107702
- Views 85
- Downloads 0
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