SEMICONDUCTOR INTEGRATED ELEMENTS BASED ON NANOSTRUCTURES SILICON FOR INFORMATION SYSTEMS

Abstract

In this paper we consider the accelerometer sensor, which is made using the combined technology of silicon-on-insulator and silicon nanowires. On its basis a fast-response, high-speed, highly sensitive to acceleration and displacement a device was developed with submicron and topological nanometer dimensions. This made it possible to implement as a discrete device or element of nanoelectromechanical systems integrated with the structure of silicon-on-insulator, which provides control of movement with an accuracy of 200 nm

Authors and Affiliations

A. A. Druzhinin, I. T. Kogut, A. Yu. Khoverko, V. I. Golota, Yu. M. Khoverko

Keywords

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  • EP ID EP399082
  • DOI 10.18524/1815-7459.2015.1.107702
  • Views 84
  • Downloads 0

How To Cite

A. A. Druzhinin, I. T. Kogut, A. Yu. Khoverko, V. I. Golota, Yu. M. Khoverko (2015). SEMICONDUCTOR INTEGRATED ELEMENTS BASED ON NANOSTRUCTURES SILICON FOR INFORMATION SYSTEMS. Сенсорна електроніка і мікросистемні технології, 12(1), 100-107. https://europub.co.uk/articles/-A-399082