Silicon and phosphorus facts on blast disease incidence of rice (Oryza sativa L.)
Journal Title: International Journal of Farming and Allied Sciences - Year 2013, Vol 2, Issue 2
Abstract
In order to evaluate the effect of silicon and phosphorus rate on disease severity of rice blast, a field experiment was carried out in factorial experiment as the complete randomized blocks design with four replications at Sari, Mazandaran, Iran in 2009. The phosphorus was used in three levels including: P0 (control), P50 and P100 kg ha-1 and silicon in three levels including: Si0 (control), Si500 and Si1000 kg ha-1. The results indicated that there was significant difference on grain yield and leaf blast at 5% probability level. So, the highest grain yield was obtained by Si1000 with 3849.5 kg ha-1. Also, the lowest leaf blast was obtained by Si1000, so that to reduction the leaf blast up to 10% in the relation to control. Si1000 had decreased significantly the lesion diameter (10.48 mm) in the relation to control. The phosphorus no affect significantly on the percentages of leaf, neck, nod, grain blast and also on lesion diameter. The silicon rates no affect on the number of infected nod, neck and grain blast. The interaction effect of P and Si indicated that Si1000P0 and Si0P0 lead to reduction significantly lesion diameter. There was significant difference on leaf blast in P100Si1000 in comparison with P100Si0. Finally, we found that in contrast to application Si only, using Si and P together can not affect significantly in different traits of leaf blast.
Authors and Affiliations
Mehrdad Ghasemi Lemraski
Keywords
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