Structure and Thermoelectric Properties of Doped Bismuth Telluride Vapor-Phase Condensation Tin SnTe: Bi
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
The results of a comprehensive study of the phase composition, structure and thermoelectric properties of doped bismuth (0,3 2 at.% Bi) thin films SnTe: Bi, deposited on the high vacuum for fresh chips (0001) single crystals of muscovite mica. The mechanisms of nucleation and growth processes, and depending on the size of nanocrystals and electrical parameters on the thickness of the condensate and content of Bi dopant. Found that the optimal thermoelectric properties of thin films SnTe: Bi defined as the thickness and dopant content. The results are presented physico-chemical treatment.
Authors and Affiliations
D. M. Freik, Ya. S. Yavorskyy, I. I. Chav'yak, V. I. Makovyshyn, O. M. Matkivskyi, R. ya. Yaremkiv
Keywords
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