Structure and Vibrational Spectra of thin Films β-Ga2O3
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 4
Abstract
The structure, phase composition and surface morphology of thin films β-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film β-Ga2O3- fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films β-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.
Authors and Affiliations
O. M. Bordun, B. O. Bordun, I. I. Medvid, I. Yo. Kukharskyy, V. V. Ptashnyk, M. V. Partyka
Keywords
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- EP ID EP260946
- DOI 10.15330/pcss.17.4.515-519
- Views 56
- Downloads 0
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