SUB-THZ/THZ RADIATION DETECTOR DEVICE BASED ON SI-MOSFET
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 3
Abstract
A sub-THz/THz radiation detector device based on Si-MOSFET has been presented. Si-MOSFET source and gate connected to an antenna serves as a detector element. Geometry of the Si-MOSFET antenna, principle of device operation, method of estimating the sensitivity and noise equivalent power (NEP) have been described. A removable system of aspheric lenses has been developed and made for this detector device, a measured point spread function of the system of aspheric lenses has been given at the frequency 140 GHz. The detector device has been tested at the same frequency; sensitivity and NEP of the detector device have been estimated and they are equal to S=2.8×105 V/W, NEP=4.3×10-10 W (Hz)-1/2, accordingly.
Authors and Affiliations
I. O. Lysiuk, A. G. Golenkov, S. Ye. Dukhnin, V. P. Reva, A. V. Shevchik-Shekera, F. F. Sizov
Keywords
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- EP ID EP398703
- DOI 10.18524/1815-7459.2017.3.109330
- Views 95
- Downloads 0
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