Thermoelectric Lead Telluride with ZnO Nanoparticles
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 1
Abstract
An X-ray diffraction structural study and measurement of Seebeck coefficient (S), the electrical conductivity (σ) and thermal conductivity (χ) for Lead Telluride with nanoinclusions of ZnO. The calculated value of the specific thermoelectric power (S2σ) and thermoelectric figure of merit (ZT). It was established that the addition of ZnO powder Nanodispersed diameter grains (40-60) nm PbTe reduces the thermal conductivity of the material, and at 0.5 wt.% ZnO to an increase of lead telluride thermoelectric figure of merit to ZT≈1,3.
Authors and Affiliations
O. M. Matkivsky
Keywords
Related Articles
- EP ID EP310457
- DOI 10.15330/pcss.16.1.62-67
- Views 61
- Downloads 0
Effect of Pulsed Current Parameters on the Structure of Amorphous Co-W Alloys and Their Thermal Stability
Methods of X-ray diffraction and differential thermal analysis is investigated of the structure and thermal stability Co-W alloys of electrodeposition at current and pulse currents. It was found the influence of modes of...
Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure
The peculiarities of the crystalandelectronicstructureof V1-xTixFeSb, х = 0 – 0,20, semiconductor solid solution wereinvestigated. Themechanismofgenerationofstructuraldefectsofacceptoranddonornatureisdescribed. In partic...
Laser-Stimulated Increase Reflectivity of Semiconductors
In this paper presents the results of optical reflection spectra of single crystals of n-Si (100) and CdTe (111) in the range 0.2 1.7 microns before and after laser irradiation in the range of energies 66 164 mJ/cm2. Is...
Nanostructured Anodic Oxide Films of Niobium: Features of Electrochemical Formation, Functional Properties and Applications (Review)
The review summarizes data on the anodic behavior of niobium in aqueous solutions. Features of electrochemical formation nanostructured oxide coatings on niobium by anodic oxidation are systematized. The article deals wi...
Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution
The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed...