Thermoelectric Properties and Defect Subsystem Vapor-Phase Condensates Tin Telluride on Glass-Ceramic Substrates
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
Investigated the thermoelectric properties of SnTe thin films with thickness ( 40-900 ) nm obtained by condensation of vapor on the high vacuum on substrates of glass ceramics under different growing technological factors : evaporation temperature Тe and Тs deposition and pressure of tellurium РТе2. Showing that elected the conditions for receiving condensate has only p-type conductivity and it is characterized by a large concentration of carriers (1020 -1021 )см-3. Established trend in the changes of the kinetic coefficients (conductivity σ, Seebeck coefficient S, thermoelectric power S2σ, carrier concentration P and mobility of carriers μ) condensates with thickness d and the variable Тs , Тe, РТе. The obtained experimental results are explained by the peculiarities of the defect subsystem of point defects, dominant among which are two- and four- charge vacancies stanum, the ratio between them determines the full range of properties under different conditions of their formation. Determined that the thin-film condensation tin telluride unlike bulk samples have high Seebeck coefficient S ≈ 80 μW/К та S2σ ≈ 18 μW/К2cm, which makes them perspective for use of p-branches in thermoelectric micromodules.
Authors and Affiliations
I. I. Chav'yak, L. Y. Mezhylovska, V. I. Makovyshyn, V. V. Prokopiv
Keywords
Related Articles
- EP ID EP297340
- DOI -
- Views 47
- Downloads 0
Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that...
Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip
The paper presents the results of research of frequency and energy characteristics of ring generators on the basis of silicon-on-isolator of the CMOS transistor structures, depending on their circuit design and construct...
Research of Formation of Enamel Coverings on Aluminium
Violation of the integrity of the coating and, consequently, the appearance of various defects help to reduce the dielectric characteristics of the coatings. Establishment of intercommunication, between technological pro...
Distribution of Temperature Profiles in Nonstoichiometric SiOx Films by Laser Annealing of the Two Beams
Theoretical study of temperature distribution profiles in nonstoichiometric SiOx films by annealing two laser beams of equal intensity. Temperature distribution on the surface of the films SiOx, irradiated laser beams at...
Influence of Operating Conditions on Structure and Physical Properties of Polymeric Materials
The changes of structure and physical properties of polymeric materials that exploited in a long time with complex mechanical loads used in pipe systems for high-pressure cold water have been studied. A significant reduc...