Thermoelectric Properties and Defect Subsystem Vapor-Phase Condensates Tin Telluride on Glass-Ceramic Substrates
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
Investigated the thermoelectric properties of SnTe thin films with thickness ( 40-900 ) nm obtained by condensation of vapor on the high vacuum on substrates of glass ceramics under different growing technological factors : evaporation temperature Тe and Тs deposition and pressure of tellurium РТе2. Showing that elected the conditions for receiving condensate has only p-type conductivity and it is characterized by a large concentration of carriers (1020 -1021 )см-3. Established trend in the changes of the kinetic coefficients (conductivity σ, Seebeck coefficient S, thermoelectric power S2σ, carrier concentration P and mobility of carriers μ) condensates with thickness d and the variable Тs , Тe, РТе. The obtained experimental results are explained by the peculiarities of the defect subsystem of point defects, dominant among which are two- and four- charge vacancies stanum, the ratio between them determines the full range of properties under different conditions of their formation. Determined that the thin-film condensation tin telluride unlike bulk samples have high Seebeck coefficient S ≈ 80 μW/К та S2σ ≈ 18 μW/К2cm, which makes them perspective for use of p-branches in thermoelectric micromodules.
Authors and Affiliations
I. I. Chav'yak, L. Y. Mezhylovska, V. I. Makovyshyn, V. V. Prokopiv
Keywords
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