Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
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Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics
Authors: S.M. Bashchenko
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