A 1.8V and 2GHz Inductively Degenerated CMOS Low Noise Amplifier

Abstract

This paper presents the design and simulation of Low Noise Amplifier (LNA) in a 0.18?m CMOS technology. The LNA function is to amplify extremely low noise amplifier without adding noise and preserving required signal to noise ratio. Cadence design tool Spectre_RF is used to design and simulation based on resistors, inductors, capacitors and transistors. Power constrained methodology is used for the design of Low Noise Amplifier. The amplifier provides a forward gain (S21) of 18.22dB with noise figure (NF) of 2.49dB while drawing 8.1mW power from a 1.8V voltage supply.

Authors and Affiliations

Somesh Kumar| Research scholar, Department of Electronics and Communication, Thapar University Patiala, India, Dr. Ravi Kumar| Assistant professor, Department of Electronics and Communication, Thapar University Patiala, India

Keywords

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  • EP ID EP8292
  • DOI -
  • Views 476
  • Downloads 27

How To Cite

Somesh Kumar, Dr. Ravi Kumar (2012). A 1.8V and 2GHz Inductively Degenerated CMOS Low Noise Amplifier. International Journal of Electronics Communication and Computer Technology, 2(4), 150-154. https://europub.co.uk/articles/-A-8292