Condensons and bicondensons in one-dimensional systems
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 3
Abstract
The paper is devoted to simulation of continual strong coupling condensons and bicondensons states in one-dimensional systems by using the Gaussian basis with exponentially correlated multipliers. To determine the accuracy of variational calculations, it has been shown that using the variational function consisting of a sum of 5 Gaussians reproduces the exact value of energy and wave function of the one-dimensional condenson with the accuracy of 7 and 5 significant digits, correspondingly. Analytical expressions for the effective functional of the one-dimensional bicondenson have been obtained. Variational calculations of singlet condenson ground state energy were carried out with simultaneous accounting of single-center correlations and correlations caused by a direct dependence of the bicondenson wave function on the distance between electrons. The graphical dependence of the bicondenson energy on the Coulomb repulsion parameter V C has been represented. The region of existence of bicondenson was determined as a function of electron-electron repulsion parameter V C ≤ V C * ≈ 5 . 4 . The one-center bicondenson model has been considered, and distribution of the two-electron probability density (squared wave function of bicondenson) in the region 2 ≤ V C has two maxima, the distance between which for V C = 2 is R m = 1.8567. This distribution of the probability density is associated with the low dimensionality of the system under consideration.
Authors and Affiliations
N. I. Kashirina
Keywords
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- EP ID EP416024
- DOI 10.15407/spqeo21.03.231
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