Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 2
Abstract
This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2 . HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW. Keywords: bipolar transistor, heterojunction, gallium arsenide.
Authors and Affiliations
S. P. Novosyadlyj Novosyadlyj, S. I. Boyko
Keywords
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- EP ID EP255252
- DOI 10.15330/pcss.17.2.281-285
- Views 66
- Downloads 0
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