Effect of Oxygen Partial Pressure on Properties of NiO Thin Films
Journal Title: 河南科技大学学报（自然科学版） - Year 2019, Vol 40, Issue 2
Abstract
NiO thin films were prepared on sapphire substrates by using a JGP-300 ultra-high vacuum magnetron sputtering coating apparatus. The effect of oxygen partial pressure on the crystal structure, surface topography, optical properties and electrical properties of Ni O films were studied by using X-ray diffractometer ( XRD) , atomic force microscope ( AFM) , ultraviolet spectrophotometer ( UV-VIS) and Hall test. The results show that Ni O film has a single ( 111) diffraction peak. The Ni O film exhibits better crystal performance when the oxygen partial pressure is 60%. With the oxygen partial pressure increasing, the surface of Ni O film gradually becomes smoother. The band gap of Ni O films obtained by ( αhν) 2-hν curve is 3. 60 ～ 3. 77 eV. All Ni O films have good p-type conductivity characteristics, and the hole carrier concentration is 5. 45 × 1017～2. 16 × 1019 cm-3.
Authors and Affiliations
Zhiyuan WANG, Yutao GAO, Zhennan FENG, Yang ZHAO, Hui WANG
Keywords
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- EP ID EP422484
- DOI 10.15926/j.cnki.issn1672-6871.2019.02.018
- Views 73
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