Obtaining of Frequency and Voltage Dependent Resistance and Interfacial States Distribution Profiles on Au / (PrBaCoO nanofiber) / n-Si Structures With Different Methods
Journal Title: Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji - Year 2017, Vol 5, Issue 3
Abstract
In this study, the density of interface states (NSS) and series resistance (RS) were examined for both frequency and voltage in PrBaCoO-nanofiber interface layered metal-semiconductor (Au/n-Si) structures. For this purpose, capacitance-voltage (C-V) and conductivity-voltage (G/-V) measurements were performed at room temperature, 1 kHz-1 MHz frequency and (3 V) voltage range. Frequency and voltage-dependent distributions of interface states were obtained from Hill Coleman and high-low capacitance (CHF-CLF) methods, and RS from Nicollian-Brews method. Interfacial states and their lifetime () were obtained from the Admittance/Conductance method developed by Nicollien and Goetzberger. Experimental results show that NSS states in impedance measurements are particularly effective in the regions of depletion and inversion while RS is only effective in the accumulation region and at high frequencies. The measured capacitance and conductivity values are corrected for high frequencies to minimize the RS effect on the measured C-V and G/-V pilots.
Authors and Affiliations
Selçuk DEMİREZEN
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