Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200 °C by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at x 2) film with the TCR close to 7.0%/°C.
Authors and Affiliations
T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, B. M. Romanyuk, V. G. Popov, O. Yo. Gudymenko, N. V. Safriuk
Keywords
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- EP ID EP216921
- DOI 10.15407/spqeo20.02.153
- Views 103
- Downloads 0
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