Speckle pattern formation in spatially limited optical systems
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
The dependences of statistical parameters inherent to speckle patterns on the object roughness and aperture size have been investigated. The experimental results that confirm theoretical dependence quality within the limits of errors were obtained. It has been shown that spatial finiteness of the optical system causes significant changes of transferred field.
Authors and Affiliations
M. M. Kotov, V. N. Kurashov, A. A. Goloborodko
Keywords
Related Articles
- EP ID EP177833
- DOI 10.15407/spqeo19.01.047
- Views 61
- Downloads 0
Structural properties of chalcogenide glasses As2Se3 doped with manganese
The paper presents results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The fun...
Influence of field dependent form of collision integral on kinetic coefficients
The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that...
Protective applications of vacuum-deposited perfluoropolymer films
The paper summarizes in brief applications of perfluoropolymer thin films deposited from the gas phase by several different methods, for protection of various materials and devices both at the research stage and already...
Electrical and dielectrical properties of composites based on (Ag1–xCux)7GeS5I mixed crystals
Polymer composites were prepared from (Ag 1–x Cu x ) 7 GeS 5 I mixed crystals grown using Bridgman–Stockbarger method. The impedance measurements were performed at room temperature in the frequency range 10 –3 –2·10 6 Hz...
Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence i...