Studying the mechanical properties of (Cu1–xAgx)7GeS5I mixed crystals by using the micro-indentation method
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 3
Abstract
(Cu1–xAgx)7GeS5I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were investigated. The measurements of mechanical parameters were performed at the room temperature by using the micro-indentation method. Variations of the hardness of (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were interpreted in the framework of the deformation gradient model. The influence of cation Cu→Ag substitution on mechanical parameters of (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals was studied.
Authors and Affiliations
V. V. Bilanych
Keywords
Related Articles
- EP ID EP416045
- DOI 10.15407/spqeo21.03.273
- Views 71
- Downloads 0
In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection
This paper reports on the development and investigations of In–Hg1–xCdxTe–In structures with symmetric nonlinear I–V curves that are sensitive to sub-terahertz radiation. It is shown that at low currents photoresponse of...
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heat...
Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence i...
Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals
A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a...
Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions on their physical properties
The single crystals of (TlGaS2)1–х(TlInSe2)х (х = 0…0.5) solid solutions have been grown up. The photoelectric, X-ray dosimetric, dielectric and optical characteristics of the (TlGaS2)1-х(TlInSe2)х solid solutions with v...