Study of High Performance of Gan-Based HEMT Having Two Channel Layers of Gan/Inalgan
Journal Title: IOSR journal of VLSI and Signal Processing - Year 2018, Vol 8, Issue 2
Abstract
In this paper, the impact of GaN-based High Electron Mobility Transistor (HEMT) is reported. The device is having two channel layers of GaN (Gallium Nitride) and InAlGaN (Indium Aluminium Gallium Nitride). The device is simulated by the TCAD, Silvaco Software in 2D format. The results so obtained have proved the high performance on the parameters like electric potential, concentration of electron, break-down voltage and transconductance (gm). The simulated device and obtained results are compared with the structure of AlGaN/GaN HEMT. The major benefit of the simulated device is the reduced leakage current. The mole fraction of Aluminium in InAlGaN has been optimized to create the best performing device.
Authors and Affiliations
Abinash Giri1 ,, K. Badrinath2 ,, Pramod Martha3
Keywords
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