Suitability of Semiconductor Heterostructure over SiO2-Air Composition for One-Dimensional Photonic Crystal based Bandpass Filter
Journal Title: International Journal of Electronics Communication and Computer Technology - Year 2013, Vol 3, Issue 3
Abstract
Bandpass filter characteristics is numerically computed for semiconductor heterostructure based onedimensional photonic crystal at different optical wavelengths by varying the structural parameters taking GaAs/AlxGa1-xAs as a suitable composition subject to normal incidence of electromagnetic wave. Transfer matrix technique is used for numerical analysis. Results are compared with conventionally used SiO2-air material system and significance improvements are observed at few desired spectra. Heterostructure provides larger passbandwidth with almost negligible ripple than conventional material system at 1330 nm or 1550 nm, which is required for present day optical communication network. Efficient tuning can be achieved by varying different layer dimensions for the preferred material composition which effectively changes the filter bandwidth in either side of the central wavelength, but it cost generation of ripples for the conventional system.
Authors and Affiliations
Arka Karmakar, Indrajit Roy| Department. of Electronics & Communication Engineering, RCC Institute of Information, Technology, Beliaghata, Kolkata, India, Indrajit Roy| Department. of Electronics & Communication Engineering, RCC Institute of Information, Technology, Beliaghata, Kolkata, India, Arpan Deyasi| Department. of Electronics & Communication Engineering, RCC Institute of Information, Technology, Beliaghata, Kolkata, India, Arpita Deb| Department. of Electronics & Communication Engineering, RCC Institute of Information, Technology, Beliaghata, Kolkata, India, Anirban Kundu| Department. of Electronics & Communication Engineering, RCC Institute of Information, Technology, Beliaghata, Kolkata, India
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