THERMAL ANNEALING KINETICS OF RADICALS FORMED BY THE RADIOLYSIS IN POLYCRYSTALLINE SOLID STATE OF ARGININE Journal title: Analele Universitatii din Bucuresti. Chimie Authors: M. Contineanu, Iulia Contineanu, Ana Neacsu Subject(s):
Effect of thermal annealing on electrical and photoelectrical properties of n-InSb Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara Subject(s):
Theoretical evaluation of the temperature field distribution in the silicon periodic nanostructures during thermal annealing Journal title: Хімія, фізика та технологія поверхні Authors: O. O. Havryliuk, O. Yu. Semchuk Subject(s):
Crystalquasichemical Description the Formation of Defects in nanodispersed Yttrium-Iron Garnet Journal title: Фізика і хімія твердого тіла Authors: V.D. Fedoriv, N.V. Stashko, I.P. Yaremiy, L.V. Turovska Subject(s):
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: Yu. Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlich... Subject(s):
Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si, Doped with Phosphorus Impurity via the Melt and by Nuclear Transmutation Technique Journal title: Фізика і хімія твердого тіла Authors: G. P. Gaidar Subject(s):
Microstructure and Mechanical Properties of SPCC Cold-rolled Steel with Isothermal Annealing Journal title: 河南科技大学学报(自然科学版) Authors: Bingxue QIN, Xudong ZHOU Subject(s):
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: Yu.Yu. Bacherikov Subject(s):
Metallic Alloy Nanoparticles and Metal-Semiconductor Nanomaterials Journal title: NanoWorld Journal Authors: Parthasarathi Gangopadhyay Subject(s):
THE USE OF RAPID THERMAL ANNEALING FOR THE FORMATION OF OXIDE FILMS IN THE STRUCTURE Dy2O3/por-SiC/SiC Journal title: ЕЛЕМЕНТИ, ПРИЛАДИ ТА СИСТЕМИ В ЕЛЕКТРОНІЦІ Authors: O. B. Okhrimenko, Yu. Yu. Bacherikov, R. V. Konakova, L.M. Kapitanchuk, A.M. Svetlichnyi Subject(s):